https://docs.google.com/document/d/1T7STY4RCtczVMoJTGfcYT43lXyCiwTUO5hNv8xqMIIc/edit?usp=sharing
Hi,
I just got into new 1um CMOS techno so here is its transistors SPICE models:
I would like to do sizing ( e.g. finding W/L ) of an NMOS transistor, so this transistor is in saturation
with ID = 400uA and biased with VGS=1.5V .
with ID = 400uA and biased with VGS=1.5V .
This is the transistor equation used for the sizing calculation:
- μ is from Spice model :
Step 1: Cox is calculated using following formula:
where is a constant:
and ( units are meters[m] ) is from Spice model of the transistor:
- Here is a spreadsheet to calculate Cox:
N-mos ( techno data )
|
N-mos ( calculated data )
| |||
TOX[m]
|
UO [cm^^2/Vsec]
|
Cox[F/meter ^^2)
|
Cox[fF/micro meter ^^2)
| |
2.00E-08
|
650
|
1.73E-03
|
1.73E+04
|
Or here is an Octave program that do the same Cox calculation:
#include <octave/oct.h>
syms ID min eox tox WdivL VGS VTH Cox min_times_Cox VDSsat R VDD
e0x = 3.9*8.854*power(10, -12) ;
tox = 200*power(10,-10) ; % units: m
min = 650 ;
VDD = 5 ;
Cox = e0x/tox ;
disp( "Cox =" ), disp( Cox ), disp( "units: F/m2" ) ;
Cox = (e0x/tox)*( power(10,15)/power(10,8) ) ;
disp( "or Cox =" ), disp( Cox ), disp( "units: fF/micro-m2" ) ;
Result of the Octave program run:
Cox =
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
Step 2: Calculating Cox * μ (units: F/Vsec)
- Here is a spreadsheet to calculate Cox * μ :
N-mos ( techno data )
|
N-mos ( calculated data )
| ||||
TOX[m]
|
UO [cm^^2/Vsec]
|
Cox[F/meter ^^2)
|
Cox[fF/micro meter ^^2)
|
Cox[F/micro meter ^^2)*UO [cm^^2/Vsec]=
Cox[F/micro meter ^^2)*UO [micro meter ^^2/Vsec]*10^^4[fF/micro meter ^^2]=
Cox[F/micro meter ^^2)*UO [micro meter ^^2/Vsec]*10^^4*10^^-15[F/micro meter ^^2]
| |
2.00E-08
|
650
|
1.73E-03
|
1.73E+04
|
1.12224450E-04
|
Or here is an Octave program that do the same Cox * μ calculation:
#include <octave/oct.h>
syms ID min eox tox WdivL VGS VTH Cox min_times_Cox VDSsat R VDD
e0x = 3.9*8.854*power(10, -12) ;
tox = 200*power(10,-10) ; % units: m
min = 650 ;
VDD = 5 ;
Cox = e0x/tox ;
disp( "Cox =" ), disp( Cox ), disp( "units: F/m2" ) ;
Cox = (e0x/tox)*( power(10,15)/power(10,8) ) ;
disp( "or Cox =" ), disp( Cox ), disp( "units: fF/micro-m2" ) ;
min_times_Cox = min * Cox * power(10,4) * power(10,-15) ;
disp ( "min * Cox =" ), disp( min_times_Cox ), disp( "units: F/Vsec" ) ;
Result of the Octave program run:
Cox =
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
min * Cox =
1.1222e-04
units: F/Vsec
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
min * Cox =
1.1222e-04
units: F/Vsec
Step 3: Calculating W/L
- Summary:
- Reminder, this is the equation we are using:
- We know that we want:
- ID = 400μA
- We know we will bias the transistor with :
- VGS = 1.5V
- From techno, meaning from SPICE model, the value of Vth[V] is:
- We already calculated Cox * μ [F/Vsec] : 1.1222 * 10^^-4
=> W/L = 14.548 or approx. 15
Here is an Octave program that do the same W/L calculation:
#include <octave/oct.h>
syms ID min eox tox WdivL VGS VTH Cox min_times_Cox VDSsat R VDD
e0x = 3.9*8.854*power(10, -12) ;
tox = 200*power(10,-10) ; % units: m
min = 650 ;
VDD = 5 ;
Cox = e0x/tox ;
disp( "Cox =" ), disp( Cox ), disp( "units: F/m2" ) ;
Cox = (e0x/tox)*( power(10,15)/power(10,8) ) ;
disp( "or Cox =" ), disp( Cox ), disp( "units: fF/micro-m2" ) ;
min_times_Cox = min * Cox * power(10,4) * power(10,-15) ;
disp ( "min * Cox =" ), disp( min_times_Cox ), disp( "units: F/Vsec" ) ;
f = -ID + (1/2)*min_times_Cox*(WdivL)*power((VGS-VTH),2)
% Substitute in values that are known
newf = subs(f, [ID VGS VTH], [( 400*power(10, -6) ), 1.5, 0.8]);
% Solve the resulting symbolic expression for x
result = solve(newf == 0, WdivL)
% And if you need a numeric (rather than symbolic) result
double(result)
Result of the Octave program run:
Cox =
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
min * Cox =
1.1222e-04
units: F/Vsec
f = (sym)
2
7⋅WdivL⋅(VGS - VTH)
-ID + ────────────────────
124750
result = (sym)
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
min * Cox =
1.1222e-04
units: F/Vsec
f = (sym)
2
7⋅WdivL⋅(VGS - VTH)
-ID + ────────────────────
124750
result = (sym)
4990
────
343
ans = 14.548
- Step 4: Verifying that when we have an NMOS ( in the techno used ) with W/L = 15 and
- we bias it with VGS=1.5V and alim. for this techno is VDD=5V,
- then the transistor should be in saturation with ID = 400μA
- For this verification I will use LTSpice simulation of following schematic:
Here is how I calculated R1 = 10.77K in this schematic:
Step 4.1: to calculate R1 we would need VDSsat because R1= (VDD -VDSsat)/IDS
R1= (5V -VDSsat)/400μA
- A friendly reminder: we are still using the same equation:
- We know that we want:
- ID = 400μA
- We already calculated Cox * μ [F/Vsec] : 1.1222 * 10^^-4
- We already calculated ( under assumption that VGS = 1.5 V and
that the value of Vth[V] is:
=> W/L = approx. 15
Note*: We expect VDSsat minimum to be VGS - Vth = 1.5 - 0.8 = 0.7V
Here is a Octave program to calculate VDSsat:
#include <octave/oct.h>
syms ID min eox tox WdivL VGS VTH Cox min_times_Cox VDSsat R VDD
e0x = 3.9*8.854*power(10, -12) ;
tox = 200*power(10,-10) ; % units: m
min = 650 ;
VDD = 5 ;
Cox = e0x/tox ;
disp( "Cox =" ), disp( Cox ), disp( "units: F/m2" ) ;
Cox = (e0x/tox)*( power(10,15)/power(10,8) ) ;
disp( "or Cox =" ), disp( Cox ), disp( "units: fF/micro-m2" ) ;
min_times_Cox = min * Cox * power(10,4) * power(10,-15) ;
disp ( "min * Cox =" ), disp( min_times_Cox ), disp( "units: F/Vsec" ) ;
f = -ID + (1/2)*min_times_Cox*(WdivL)*power((VGS-VTH),2)
% Substitute in values that are known
newf = subs(f, [ID VGS VTH], [( 400*power(10, -6) ), 1.5, 0.8]);
% Solve the resulting symbolic expression for x
result = solve(newf == 0, WdivL)
% And if you need a numeric (rather than symbolic) result
double(result)
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
f = -ID + (1/2)*min_times_Cox*(WdivL)*power(VDSsat,2)
% Substitute in values that are known
newf = subs(f, [ID WdivL] , [( 400*power(10, -6) ), 15 ]);
% Solve the resulting symbolic expression for x
result = solve(newf == 0,VDSsat)
% And if you need a numeric (rather than symbolic) result
double(result)
Result of the Octave program run:
Cox =
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
min * Cox =
1.1222e-04
units: F/Vsec
f = (sym)
2
7⋅WdivL⋅(VGS - VTH)
-ID + ────────────────────
124750
result = (sym)
0.0017265
units: F/m2
or Cox =
1.7265e+04
units: fF/micro-m2
min * Cox =
1.1222e-04
units: F/Vsec
f = (sym)
2
7⋅WdivL⋅(VGS - VTH)
-ID + ────────────────────
124750
result = (sym)
4990
────
343
ans = 14.548
f = (sym)
2
7⋅VDSsat ⋅WdivL
-ID + ───────────────
124750
result = (sym 2×1 matrix)
⎡-√20958 ⎤
⎢────────⎥
⎢ 210 ⎥
⎢ ⎥
⎢ √20958 ⎥
⎢ ────── ⎥
⎣ 210 ⎦
ans =
-0.68938
0.68938
2
7⋅VDSsat ⋅WdivL
-ID + ───────────────
124750
result = (sym 2×1 matrix)
⎡-√20958 ⎤
⎢────────⎥
⎢ 210 ⎥
⎢ ⎥
⎢ √20958 ⎥
⎢ ────── ⎥
⎣ 210 ⎦
ans =
-0.68938
0.68938
Source code of Octave program is here: octave_program
Step 4.2:
- A friendly reminder from previous step: R1= (5V -VDSsat)/400μA
=> R1 = (5V -0.68938)/400μA
=> R1 = 1.0777e+04 = approx. 10.78KΩ
LTspice simulation showed: IDS = 354 μA (expected 400 μA ) and VDSsat= 1.18V ( expected result: 689mV )
Name: m1
Model: n_1u
Id: 3.54e-04
Vgs: 1.50e+00
Vds: 1.18e+00
Vbs: 0.00e+00
Vth: 8.39e-01
Vdsat: 5.59e-01
Finally, by fine adjusting of W/L from 15 to 17, LTspice simulation showed: IDS = approx. 398 μA (expected 400 μA ) and VDSsat= approx. 711mV ( expected result: 689mV )
Name: m1
Model: n_1u
Id: 3.98e-04
Vgs: 1.50e+00
Vds: 7.11e-01
Vbs: 0.00e+00
Vth: 8.39e-01
Vdsat: 5.60e-01
© 2011 ASIC Stoic. All rights reserved.
© 2011 ASIC Stoic. All rights reserved.
No comments:
Post a Comment